IPG20N06S415ATMA1
MOSFET 2N-CH 60V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ IPG20N06S415ATMA1 is a dual N-channel MOSFET array designed for demanding applications. Featuring a Vds of 60V and a continuous drain current capability of 20A at 25°C, this component offers a low Rds(on) of 15.5mOhm at 17A and 10V. The device boasts a maximum power dissipation of 50W and is housed in an 8-PowerVDFN (PG-TDSON-8-4) package suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 29nC (max) at 10V and input capacitance (Ciss) of 2260pF (max) at 25V. Qualified to AEC-Q101 and rated for automotive applications, this MOSFET array operates within a temperature range of -55°C to 175°C (TJ). It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 50W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TDSON-8-4 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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