IPG20N06S415AATMA1
MOSFET 2N-CH 60V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ IPG20N06S415AATMA1 is a 60V, 20A dual N-channel MOSFET array packaged in an 8-lead PG-TDSON-8-10 (8-PowerVDFN) for surface mounting with wettable flank technology. This automotive-grade component, qualified to AEC-Q101, features a low on-resistance of 15.5mOhm at 17A and 10V, with a continuous drain current capability of 20A at 25°C and a maximum power dissipation of 50W. Key electrical characteristics include a gate charge of 29nC (max) at 10V and input capacitance of 2260pF (max) at 25V. It operates across a temperature range of -55°C to 175°C. This device is commonly utilized in automotive applications and power management systems requiring efficient switching and robust performance. Supplied in Tape & Reel (TR).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 50W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 25V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TDSON-8-10 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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