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IPG20N06S3L-35

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IPG20N06S3L-35

MOSFET 2N-CH 55V 20A 8TDSON

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPG20N06S3L-35 is a 55V, 20A dual N-channel MOSFET array in a PG-TDSON-8-4 package. This device features a low Rds(on) of 35mOhm at 11A and 10V, with a logic level gate for enhanced drive flexibility. The low gate charge of 23nC at 10V and input capacitance of 1730pF at 25V contribute to efficient switching performance. With a maximum power dissipation of 30W and an operating temperature range of -55°C to 175°C, the IPG20N06S3L-35 is suitable for demanding applications in automotive, industrial power, and battery management systems. The 8-PowerVDFN package is designed for surface mounting and is supplied on tape and reel for automated assembly processes.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max30W
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A
Input Capacitance (Ciss) (Max) @ Vds1730pF @ 25V
Rds On (Max) @ Id, Vgs35mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.2V @ 15µA
Supplier Device PackagePG-TDSON-8-4

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