IPG20N06S3L-23
MOSFET 2N-CH 55V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ IPG20N06S3L-23 is a 2 N-channel Power MOSFET array designed for demanding applications. This component boasts a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 20A at 25°C. Featuring a low Rds(on) of 23mOhm at 16A and 10V, it delivers efficient power switching. The device is built with a logic level gate for enhanced compatibility with various driving circuits. Its 8-PowerVDFN package, specifically PG-TDSON-8-4, is suitable for surface mounting and is supplied in Tape & Reel (TR). Key parameters include a maximum power dissipation of 45W and an operating temperature range of -55°C to 175°C. This array is commonly found in automotive, industrial power control, and high-efficiency power supply designs.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 45W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Supplier Device Package | PG-TDSON-8-4 |
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