IPG20N06S2L65AAUMA1
MOSFET 2N-CH 55V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS® IPG20N06S2L65AAUMA1 is a dual N-channel MOSFET array designed for demanding power applications. This PG-TDSON-8-10 packaged component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). With a low on-resistance of 65mOhm maximum at 15A and 10V, it offers efficient power handling. The device supports logic-level gate drive, simplifying control circuitry. Key parameters include a maximum power dissipation of 43W (Tc), a gate charge (Qg) of 12nC maximum at 10V, and input capacitance (Ciss) of 410pF maximum at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this surface mountable component is suitable for automotive and industrial power management systems.
Additional Information
Series: OptiMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 43W (Tc) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Supplier Device Package | PG-TDSON-8-10 |