IPG20N04S409ATMA1
MOSFET 2N-CH 40V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPG20N04S409ATMA1 is a dual N-channel MOSFET array in a PG-TDSON-8 package, suitable for surface mount applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C (Tc), with a maximum power dissipation of 54W (Tc). The Rds(on) is specified at 8.6mOhm maximum for an Id of 17A and Vgs of 10V. Gate charge (Qg) is a maximum of 28nC at 10V, and input capacitance (Ciss) is 2250pF maximum at 25V. Operating temperature ranges from -55°C to 175°C (TJ). Qualified to AEC-Q101 and bearing an automotive grade, this MOSFET array is designed for demanding automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 54W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 22µA |
| Supplier Device Package | PG-TDSON-8 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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