IPG20N04S408BATMA1
MOSFET 2N-CH 40V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™-T2 IPG20N04S408BATMA1 is a 40V, 2 N-Channel Power MOSFET array designed for high-performance applications. This device features a low Rds(on) of 7.6mOhm at 17A, 10V, and a continuous drain current capability of 20A (Tc). With a maximum power dissipation of 65W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The MOSFET array is housed in an 8-PowerVDFN (PG-TDSON-8-10) package with wettable flank terminals, facilitating robust surface mounting and automated optical inspection. Key electrical characteristics include a gate charge (Qg) of 36nC at 10V and an input capacitance (Ciss) of 2940pF at 25V. This component meets AEC-Q101 qualification, making it ideal for automotive and industrial power management solutions.
Additional Information
Series: OptiMOS™-T2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 65W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 25V |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | PG-TDSON-8-10 |
| Grade | Automotive |
| Qualification | AEC-Q101 |