IPG20N04S408AATMA1
MOSFET 2N-CH 40V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPG20N04S408AATMA1 is a dual N-Channel MOSFET array designed for high-performance applications. This component features a 40V drain-to-source voltage and a continuous drain current capability of 20A at 25°C, with a maximum power dissipation of 65W. The Rds(on) is rated at 7.6mOhm at 17A and 10V. It offers a low gate charge of 36nC at 10V and an input capacitance of 2940pF at 25V. The device is housed in a PG-TDSON-8-10 package, a surface mount configuration with wettable flanks for enhanced solder joint reliability. Qualified to AEC-Q101 standards and automotive grade, this MOSFET array is suitable for demanding automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 65W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 25V |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Supplier Device Package | PG-TDSON-8-10 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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