IPG16N10S461ATMA1
MOSFET 2N-CH 100V 16A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies' OptiMOS™ IPG16N10S461ATMA1 is a 2 N-channel MOSFET array featuring a 100V drain-to-source voltage and a continuous drain current of 16A at 25°C. This automotive-grade component is housed in a PG-TDSON-8-4 package, supporting surface mount configurations. With a maximum power dissipation of 29W and a low Rds(on) of 61mOhm at 16A and 10V, it offers efficient switching. Key parameters include a gate charge of 7nC (max) at 10V and an input capacitance of 490pF (max) at 25V. The device operates reliably across a temperature range of -55°C to 175°C and is qualified to AEC-Q101 standards, making it suitable for demanding automotive applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 29W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 9µA |
| Supplier Device Package | PG-TDSON-8-4 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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