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IPG15N06S3L-45

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IPG15N06S3L-45

MOSFET 2N-CH 55V 15A 8TDSON

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPG15N06S3L-45 is a dual N-channel MOSFET array designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 15A at 25°C, with a maximum power dissipation of 21W. The low on-resistance, specified at 45mOhm maximum for an Id of 10A and Vgs of 10V, ensures efficient power transfer. With a logic level gate, it is suitable for driving from lower voltage microcontrollers. Key parameters include a gate charge (Qg) of 20nC maximum at 10V and an input capacitance (Ciss) of 1420pF maximum at 25V. The device is housed in an 8-PowerVDFN package, supplied on tape and reel, and operates across a temperature range of -55°C to 175°C. This MOSFET array finds utility in automotive, industrial power control, and high-efficiency power supply designs.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max21W
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C15A
Input Capacitance (Ciss) (Max) @ Vds1420pF @ 25V
Rds On (Max) @ Id, Vgs45mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.2V @ 10µA
Supplier Device PackagePG-TDSON-8-4

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