FS45MR12W1M1B11BOMA1
SIC 6N-CH 1200V AG-EASY1BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™+ FS45MR12W1M1B11BOMA1 is a 6-channel, N-channel Silicon Carbide MOSFET array configured as a 3-phase bridge. This module features a 1200V (1.2kV) drain-source voltage rating and a continuous drain current capability of 25A (Tj) at 25°C. The device exhibits a low typical on-resistance of 45mOhm at 25A and 15V gate-source voltage. Key parameters include a gate charge (Qg) of 62nC (max) at 15V and input capacitance (Ciss) of 1840pF (max) at 800V. Operating across a temperature range of -40°C to 150°C (TJ), this chassis-mount component is housed in the AG-EASY1BM-2 module package and supplied in trays. Applications for this power module span electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Supplier Device Package | AG-EASY1BM-2 |
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