FS05MR12A6MA1BBPSA1
SIC 1200V 200A AG-HYBRIDDManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies presents the FS05MR12A6MA1BBPSA1, a Silicon Carbide (SiC) MOSFET array from the HybridPACK™ series. This module features a 1200V (1.2kV) Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 200A at 25°C. Designed for chassis mounting, the component utilizes the AG-HYBRIDD-2 package. This advanced SiC technology is instrumental in high-performance applications across industries such as electric vehicles, industrial power supplies, and renewable energy systems, offering superior efficiency and power density.
Additional Information
Series: HybridPACK™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | - |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | AG-HYBRIDD-2 |
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