FS03MR12A7MA2BHPSA1
MOSFET 6N-CH 1200V 310AManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies FS03MR12A7MA2BHPSA1, a 6-channel Silicon Carbide (SiC) MOSFET array from the HybridPACK™ series, offers a robust solution for high-power applications. This module features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 310A at 25°C. The on-resistance (Rds On) is specified at a maximum of 2.54mOhm at 310A and 18V. Key parameters include a gate charge (Qg) of 870nC (max) at 18V and input capacitance (Ciss) of 25900pF (max) at 750V. Designed for chassis mounting, this component operates within a temperature range of -40°C to 175°C. Its SiC technology makes it suitable for demanding industries such as electric vehicles, renewable energy systems, and industrial power supplies.
Additional Information
Series: HybridPACK™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 310A |
| Input Capacitance (Ciss) (Max) @ Vds | 25900pF @ 750V |
| Rds On (Max) @ Id, Vgs | 2.54mOhm @ 310A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 870nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.55V @ 120mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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