FS03MR12A6MA1LBBPSA1
SIC 6N-CH 1200V AG-HYBRIDDManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HybridPACK™ FS03MR12A6MA1LBBPSA1 is a 6 N-channel Silicon Carbide (SiC) MOSFET array designed for high-power applications. This component features a 1200V (1.2kV) drain-source voltage rating and a continuous drain current capability of 400A at 25°C. With a low on-resistance (Rds On) of 3.7mOhm at 400A and 15V Vgs, it offers excellent efficiency. The device is housed in an AG-HYBRIDD-2 module with chassis mount for robust thermal management. Key parameters include a gate charge (Qg) of 1320nC at 15V and input capacitance (Ciss) of 42500pF at 600V. The threshold voltage (Vgs(th)) is a maximum of 5.55V at 240mA. This SiC MOSFET array is suitable for demanding applications within the electric vehicle, industrial power supply, and renewable energy sectors. It is supplied in Tray packaging.
Additional Information
Series: HybridPACK™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A |
| Input Capacitance (Ciss) (Max) @ Vds | 42500pF @ 600V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 240mA |
| Supplier Device Package | AG-HYBRIDD-2 |
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