FS03MR12A6MA1BBPSA1
SIC 6N-CH 1200V AG-HYBRIDDManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies' FS03MR12A6MA1BBPSA1 is a Silicon Carbide (SiC) MOSFET array from the HybridPACK™ series. This module features a 6 N-channel configuration designed as a 3-phase bridge, offering a drain-to-source voltage (Vdss) of 1200V. The continuous drain current (Id) at 25°C is 400A (Tj), with a typical Rds On of 3.7mOhm at 400A and 15V. Key parameters include a gate charge (Qg) of 1320nC at 15V and input capacitance (Ciss) of 42500pF at 600V. The device operates within an ambient temperature range of -40°C to 150°C (TJ) and is supplied in an AG-HYBRIDD-2 module package suitable for chassis mounting. This component is utilized in applications such as electric vehicle powertrains and industrial motor drives.
Additional Information
Series: HybridPACK™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 42500pF @ 600V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 240mA |
| Supplier Device Package | AG-HYBRIDD-2 |
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