FS02MR12A8MA2BBPSA1
HYBRID PACK DRIVE G2 SICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HybridPACK™ FS02MR12A8MA2BBPSA1 is a 1200V, 390A (TJ) Silicon Carbide (SiC) MOSFET array designed for high-power applications. This chassis-mount module features a 6 N-Channel configuration with a low on-resistance of 1.9mOhm @ 390A, 18V. Key parameters include a gate charge (Qg) of 1.19µC @ 18V and input capacitance (Ciss) of 34500pF @ 750V. The device operates within a temperature range of -40°C to 175°C (TJ). Its robust SiC technology makes it suitable for demanding industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: HybridPACK™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 390A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 34500pF @ 750V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 390A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 1.19µC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.55V @ 160mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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