FF8MR12W2M1B11BOMA1
MOSFET 2N-CH 1200V AG-EASY2BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™+ FF8MR12W2M1B11BOMA1 is a 1200V, dual N-channel MOSFET array designed for high-power applications. Featuring Silicon Carbide (SiC) technology, this component offers a low on-resistance of 7.5mOhm at 150A and 15V. The FF8MR12W2M1B11BOMA1 has a continuous drain current of 150A (Tj) and a gate charge of 372nC at 15V. Its input capacitance (Ciss) is rated at a maximum of 11000pF at 800V. This chassis mount module operates within a temperature range of -40°C to 150°C (TJ). The Infineon Technologies FF8MR12W2M1B11BOMA1 is utilized in demanding industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The component is supplied in Tray packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 11000pF @ 800V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 150A, 15V (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 372nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 60mA |
| Supplier Device Package | AG-EASY2BM-2 |
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