FF6MR12W2M1PB11BPSA1
SIC 2N-CH 1200V 200AManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™+ FF6MR12W2M1PB11BPSA1 is a 1200V (1.2kV) 200A (Tj) dual N-channel MOSFET array housed in a chassis mount module. This Silicon Carbide (SiC) device offers a low on-resistance of 5.63mOhm @ 200A, 15V. Key electrical parameters include Vds of 1200V, a continuous drain current of 200A (Tj) at 25°C, gate charge (Qg) of 496nC @ 15V, and input capacitance (Ciss) of 14700pF @ 800V. The threshold voltage (Vgs(th)) is a maximum of 5.55V @ 80mA. It operates across a temperature range of -40°C to 150°C (TJ). This component is suitable for demanding applications in power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
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