FF6MR12W2M1B11BOMA1
SIC 2N-CH 1200V AG-EASY2BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™+ FF6MR12W2M1B11BOMA1 is a 1200V (1.2kV) Silicon Carbide (SiC) MOSFET array featuring a dual 2-channel configuration. This module, part of the CoolSiC™+ series, is designed for chassis mounting and offers a continuous drain current of 200A (Tj) at 25°C. Key electrical parameters include a drain-to-source voltage (Vdss) of 1200V, a maximum on-resistance (Rds On) of 5.63mOhm at 200A and 15V, and a gate charge (Qg) of 496nC at 15V. Input capacitance (Ciss) is specified at 14700pF maximum at 800V. The threshold voltage (Vgs(th)) is 5.55V maximum at 80mA. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for applications in electric vehicle powertrains, industrial power supplies, and renewable energy systems. The device is supplied in Tray packaging with the AG-EASY2BM-2 module package.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
| Supplier Device Package | AG-EASY2BM-2 |
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