FF6MR12KM1PHOSA1
SIC 2N-CH 1200V 250A AG-62MMManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™ FF6MR12KM1PHOSA1 is a 1200V (1.2kV) Silicon Carbide (SiC) MOSFET array featuring two N-channel configurations within an AG-62MM chassis mount module. This device offers a continuous drain current capability of 250A at 25°C (Tc) and a low on-resistance of 5.81mOhm at 250A and 15V. Key parameters include a gate charge of 496nC at 15V and input capacitance of 14700pF at 800V. With an operating temperature range of -40°C to 150°C (TJ), this component is suited for demanding applications in industrial power supplies, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.81mOhm @ 250A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.15V @ 80mA |
| Supplier Device Package | AG-62MM |
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