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FF4MR12W2M1HB11BPSA1

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FF4MR12W2M1HB11BPSA1

SIC 2N-CH 1200V 170A MODULE

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Mosfet Array 1200V (1.2kV) 170A (Tj) Chassis Mount Module

Additional Information

Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 175°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C170A (Tj)
Input Capacitance (Ciss) (Max) @ Vds17600pF @ 800V
Rds On (Max) @ Id, Vgs4mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs594nC @ 18V
FET Feature-
Vgs(th) (Max) @ Id5.15V @ 80mA
Supplier Device PackageModule

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