FF45MR12W1M1PB11BPSA1
SIC 2N-CH 1200V AG-EASY1BMManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™ FF45MR12W1M1PB11BPSA1 is a 2 N-channel Silicon Carbide (SiC) MOSFET array housed in an AG-EASY1BM module for chassis mounting. This device features a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 25A at 25°C (Tj). The on-resistance (Rds On) is a maximum of 45mOhm at 25A and 15V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 62nC maximum at 15V and input capacitance (Ciss) of 1840pF maximum at 800V. The operating temperature range is -40°C to 150°C (TJ). This component is suitable for applications in electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Supplier Device Package | AG-EASY1BM |
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