FF45MR12W1M1B11BOMA1
SIC 2N-CH 1200V AG-EASY1BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™+ FF45MR12W1M1B11BOMA1 is a 1200V (1.2kV) 2 N-Channel Silicon Carbide MOSFET array. This device features a continuous drain current capability of 25A (Tj) at 25°C and a typical Rds(on) of 45mOhm at 25A and 15V. With a gate charge of 62nC (max) at 15V and input capacitance of 1840pF (max) at 800V, it is designed for efficient power switching. The FF45MR12W1M1B11BOMA1 is housed in an AG-EASY1BM-2 module with chassis mount capability, operating across a temperature range of -40°C to 150°C (TJ). This component is suitable for applications in electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Supplier Device Package | AG-EASY1BM-2 |
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