FF3MR12KM1HOSA1
SIC 2N-CH 1200V 375A AG-62MMManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies FF3MR12KM1HOSA1 is a CoolSiC™ series Silicon Carbide MOSFET array featuring two N-channel devices. This component offers a 1200V (1.2kV) drain-to-source voltage (Vdss) and a continuous drain current capability of 375A (Tc). Key parameters include a low on-resistance of 2.83mOhm at 375A and 15V, a gate charge (Qg) of 1000nC at 15V, and an input capacitance (Ciss) of 29800pF at 25V. The device operates within a temperature range of -40°C to 150°C (TJ) and is housed in an AG-62MM module package suitable for chassis mounting. Applications for this high-power device include electric vehicle charging, industrial motor drives, and solar inverters.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 29800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2.83mOhm @ 375A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1000nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.15V @ 168mA |
| Supplier Device Package | AG-62MM |
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