FF2MR12KM1PHOSA1
SIC 2N-CH 1200V 500A AG-62MMManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™ FF2MR12KM1PHOSA1 is a 2 N-Channel Silicon Carbide MOSFET array configured as a half-bridge. This module features a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 500A at 25°C (Tc). The on-resistance (Rds On) is rated at a maximum of 2.13mOhm at 500A and 15V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 1340nC at 15V and an input capacitance (Ciss) of 39700pF at 800V. The device is designed for chassis mounting within an AG-62MM package. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for high-power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 500A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 39700pF @ 800V |
| Rds On (Max) @ Id, Vgs | 2.13mOhm @ 500A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1340nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.15V @ 224mA |
| Supplier Device Package | AG-62MM |
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