FF2MR12KM1HOSA1
SIC 2N-CH 1200V 500A AG-62MMManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™ FF2MR12KM1HOSA1 is a 1200V Silicon Carbide (SiC) MOSFET array featuring a 2 N-channel configuration in a half-bridge topology. This module is designed for high-power applications, boasting a continuous drain current capability of 500A (Tc) and a low on-resistance of 2.13mOhm @ 500A, 15V. Key electrical parameters include a drain-to-source voltage (Vdss) of 1200V, gate charge (Qg) of 1340nC @ 15V, and input capacitance (Ciss) of 39700pF @ 800V. The device operates within an industrial temperature range of -40°C to 150°C (TJ) and utilizes the AG-62MM module package for chassis mounting. This component is suitable for demanding applications in sectors such as electric vehicles, industrial motor drives, and renewable energy systems.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 500A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 39700pF @ 800V |
| Rds On (Max) @ Id, Vgs | 2.13mOhm @ 500A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1340nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.15V @ 224mA |
| Supplier Device Package | AG-62MM |
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