FF2600UXTR33T2M1BPSA1
MOSFET 2N-CH 3300V AG-XHP2K33Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™ FF2600UXTR33T2M1BPSA1 is a 2 N-Channel Silicon Carbide MOSFET array designed for high-voltage applications. This component features a 3300V (3.3kV) drain-to-source voltage (Vdss) and a continuous drain current of 720A (Tc) at 25°C. The FF2600UXTR33T2M1BPSA1 offers a low on-resistance of 3.1mOhm at 750A and 15V (Vgs). Key parameters include a gate charge (Qg) of 3750nC at 15V and input capacitance (Ciss) up to 152000pF at 1.8kV. This MOSFET array is chassis mountable and operates within a temperature range of -40°C to 175°C (TJ). The supplier device package is AG-XHP2K33. This component is suitable for demanding applications in power conversion, electric vehicles, and industrial power systems.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 3300V (3.3kV) |
| Current - Continuous Drain (Id) @ 25°C | 720A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 152000pF @ 1.8kV |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 750A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 3750nC @ 15V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.55V @ 675mA |
| Supplier Device Package | AG-XHP2K33 |
| Grade | - |
| Qualification | - |
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