FF23MR12W1M1PB11BPSA1
MOSFET 2 IND 1200V 50A EASY1BMManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™+ MOSFET array, part number FF23MR12W1M1PB11BPSA1, features two independent MOSFETs in an AG-EASY1BM-2 module. This device offers a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) capability of 50A at 25°C. The on-resistance (Rds On) is specified at a maximum of 22.5mOhm at 50A and 15V Vgs. Key parameters include a gate charge (Qg) of 124nC at 15V and an input capacitance (Ciss) of 3680pF maximum at 800V. The component is designed for chassis mounting and operates within a temperature range of -40°C to 150°C. This MOSFET array is suitable for applications in power supplies, electric vehicle charging, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 Independent |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 3680pF @ 800V |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 50A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.5V @ 20mA |
| Supplier Device Package | AG-EASY1BM-2 |
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