FF23MR12W1M1B11BOMA1
SIC 2N-CH 1200V 50A MODULEManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™+ FF23MR12W1M1B11BOMA1 is a 1200V, 50A, 2-channel N-channel Silicon Carbide (SiC) MOSFET array module. This chassis mount device offers a low on-resistance of 23mOhm at 50A and 15V. Key electrical characteristics include a Vds of 1200V, a continuous drain current (Id) of 50A at 25°C, a gate charge (Qg) of 125nC maximum at 15V, and an input capacitance (Ciss) of 3950pF maximum at 800V. The threshold voltage (Vgs(th)) is a maximum of 5.55V at 20mA. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for various high-power applications, including electric vehicle powertrains, industrial motor drives, and renewable energy systems. The device is supplied in a tray package.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Supplier Device Package | Module |
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