FF2000UXTR33T2M1BPSA1
FF2000UXTR33T2M1BPSA1Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™ FF2000UXTR33T2M1BPSA1 is a high-performance Silicon Carbide (SiC) MOSFET array. This module features two N-channel MOSFETs in a half-bridge configuration, designed for demanding power applications. With a D-S voltage rating of 3300V and a continuous drain current capability of 925A at 25°C (Tc), it is suitable for high-power motor drives, industrial power supplies, and renewable energy systems. The device exhibits a low on-resistance of 2.4mOhm at 1kA and 15V, contributing to reduced conduction losses. Key parameters include a gate charge of 5000nC (max) at 15V and input capacitance of 203000pF (max) at 1.8kV. The FF2000UXTR33T2M1BPSA1 utilizes the AG-XHP2K33 module package for chassis mounting, operating across a temperature range of -40°C to 175°C.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 3300V (3.3kV) |
| Current - Continuous Drain (Id) @ 25°C | 925A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 203000pF @ 1.8kV |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 1kA, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 5000nC @ 15V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 5.55V @ 900mA |
| Supplier Device Package | AG-XHP2K33 |
| Grade | - |
| Qualification | - |
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