FF11MR12W1M1PB11BPSA1
SIC 2N-CH 1200V AG-EASY1B-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies FF11MR12W1M1PB11BPSA1 is a high-performance Silicon Carbide (SiC) MOSFET array from the EasyDUAL™ series. This component features a 1200V (1.2kV) drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100A (Tj) at 25°C. The device is configured as two N-Channel MOSFETs in a dual arrangement, offering an Rds On (Max) of 11.3mOhm at 100A, 15V. Key parameters include a gate charge (Qg) of 248nC at 15V and input capacitance (Ciss) of 7360pF at 800V. The FF11MR12W1M1PB11BPSA1 utilizes the AG-EASY1B-2 package, designed for chassis mounting, and operates within a temperature range of -40°C to 150°C (TJ). This SiC MOSFET array is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems where high efficiency and power density are critical.
Additional Information
Series: EasyDUAL™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 7360pF @ 800V |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 100A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 248nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 40mA |
| Supplier Device Package | AG-EASY1B-2 |
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