FF11MR12W1M1B70BPSA1
SIC 2N-CH 1200V AG-EASY1BManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies CoolSiC™+ FF11MR12W1M1B70BPSA1 is a 2 N-Channel Silicon Carbide MOSFET array designed for high-power applications. This component features a 1200V (1.2kV) drain-to-source voltage rating and a continuous drain current capability of 100A at 25°C (TJ). The FF11MR12W1M1B70BPSA1 exhibits a low on-resistance of 11.3mOhm at 100A and 15V. Key parameters include a gate charge (Qg) of 248nC (max) at 15V and input capacitance (Ciss) of 7360pF (max) at 800V. The device is configured as a half-bridge and utilizes the AG-EASY1B package for chassis mounting. Operating temperature ranges from -40°C to 150°C (TJ). This MOSFET array is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 7360pF @ 800V |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 100A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 248nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 40mA |
| Supplier Device Package | AG-EASY1B |
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