FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULEManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™+ FF11MR12W1M1B11BOMA1 is a 2 N-Channel Silicon Carbide (SiC) MOSFET array. This chassis mount module offers a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 100A at 25°C. Featuring a low on-resistance (Rds On) of 11mOhm at 100A and 15V, this component utilizes SiC technology for enhanced performance. Key parameters include a gate charge (Qg) of 250nC at 15V and an input capacitance (Ciss) of 7950pF at 800V. The threshold voltage (Vgs(th)) is a maximum of 5.55V at 40mA. It operates within an extended temperature range of -40°C to 150°C. This device is suitable for applications in electric vehicle charging, industrial power supplies, and motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A |
| Input Capacitance (Ciss) (Max) @ Vds | 7950pF @ 800V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 40mA |
| Supplier Device Package | Module |
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