FF08MR12W1MA1B11ABPSA1
SIC 2N-CH 1200V AG-EASY1BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™ FF08MR12W1MA1B11ABPSA1 is a 2 N-Channel Silicon Carbide MOSFET array featuring a 1200V (1.2kV) drain-source voltage and a continuous drain current of 150A (Tj). This component, housed in the AG-EASY1BM-2 chassis mount module package, offers a low on-resistance of 9.8mOhm at 150A and 15V. Key parameters include a gate charge of 450nC at 15V and input capacitance of 16000pF at 600V. It operates within a temperature range of -40°C to 150°C (TJ). This device is utilized in demanding applications within the industrial power supply, electric vehicle, and renewable energy sectors.
Additional Information
Series: CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 16000pF @ 600V |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 150A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 450nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 90mA |
| Supplier Device Package | AG-EASY1BM-2 |
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