F445MR12W1M1B76BPSA1
SIC 4N-CH 1200V 25A AG-EASY1BManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies F445MR12W1M1B76BPSA1 is a Silicon Carbide (SiC) MOSFET array from the EasyPACK™ CoolSiC™ series. This component features a 4 N-channel configuration, specifically a full bridge. It offers a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 25A (Tj) at 25°C. The device has a typical Rds On of 45mOhm at 25A and 15V, with a gate charge (Qg) of 62nC at 15V. Input capacitance (Ciss) is a maximum of 1840pF at 800V. The threshold voltage (Vgs(th)) is a maximum of 5.55V at 10mA. This module is designed for chassis mounting and operates within a temperature range of -40°C to 150°C (TJ). It is commonly utilized in power electronics applications, including industrial motor drives, renewable energy systems, and electric vehicle charging infrastructure. The component is supplied in tray packaging.
Additional Information
Series: EasyPACK™ CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Supplier Device Package | AG-EASY1B-2 |
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