F423MR12W1M1B76BPSA1
SIC 4N-CH 1200V 45A AG-EASY1BManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies EasyPACK™ CoolSiC™ F423MR12W1M1B76BPSA1 is a 4 N-channel Silicon Carbide MOSFET module featuring a full bridge configuration. This module offers a drain-source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 45A at Tj. The on-resistance (Rds On) is specified at a maximum of 22.5mOhm at 50A and 15V gate-source voltage. Key parameters include a gate charge (Qg) of 124nC and input capacitance (Ciss) of 3680pF. The module utilizes the AG-EASY1B-2 package for chassis mounting and operates within an industrial temperature range of -40°C to 150°C. This component is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: EasyPACK™ CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 3680pF @ 800V |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 50A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Supplier Device Package | AG-EASY1B-2 |
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