F415MR12W2M1B76BOMA1
SIC 4N-CH 1200V 75A AG-EASY1BManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies F415MR12W2M1B76BOMA1 is a 4 N-Channel Silicon Carbide (SiC) MOSFET array from the EasyPACK™ CoolSiC™ series. This module, configured as a full bridge, offers a Drain-to-Source Voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 75A at 25°C (Tj). Key parameters include a maximum Rds On of 15mOhm at 75A and 15V, a gate charge (Qg) of 186nC at 15V, and input capacitance (Ciss) of 5520pF at 800V. The component features a chassis mount configuration within an AG-EASY1B-2 package and operates across an ambient temperature range of -40°C to 150°C (TJ). This device is suitable for use in industrial applications such as electric vehicle charging, solar inverters, and industrial power supplies.
Additional Information
Series: EasyPACK™ CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 5520pF @ 800V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 75A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 186nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 30mA |
| Supplier Device Package | AG-EASY1B-2 |
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