F411MR12W2M1B76BOMA1
SIC 4N-CH 1200V AG-EASY1B-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies EasyPACK™ CoolSiC™ F411MR12W2M1B76BOMA1 is a 1200V (1.2kV) Silicon Carbide (SiC) MOSFET array featuring a 4 N-Channel full bridge configuration. This chassis mount module offers a continuous drain current of 100A at junction temperature (Tj) with a low on-resistance (Rds On) of 11.3mOhm at 100A, 15V. Key parameters include a gate charge (Qg) of 248nC @ 15V and input capacitance (Ciss) of 7360pF @ 800V. The device operates across a temperature range of -40°C to 150°C (TJ) and utilizes the AG-EASY1B-2 package. This component is suitable for applications in electric vehicle powertrains, industrial motor drives, and renewable energy systems.
Additional Information
Series: EasyPACK™ CoolSiC™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 7360pF @ 800V |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 100A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 248nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 40mA |
| Supplier Device Package | AG-EASY1B-2 |
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