DF23MR12W1M1PB11BPSA1
SIC 2N-CH 1200V 25A AG-EASY1BManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies EasyPACK™ power module featuring a 2 N-Channel Silicon Carbide (SiC) MOSFET array. This component provides a 1200V (1.2kV) drain-to-source voltage (Vdss) and a continuous drain current (Id) of 25A (Tj) at 25°C. The device exhibits a maximum Rds On of 45mOhm at 25A and 15V, with a gate charge (Qg) of 62nC at 15V and input capacitance (Ciss) of 1840pF at 800V. The threshold voltage (Vgs(th)) is 5.55V maximum at 10mA. This chassis mount module, part number DF23MR12W1M1PB11BPSA1, operates from -40°C to 150°C (TJ) and is supplied in the AG-EASY1B-2 package. Its high-performance SiC technology makes it suitable for applications in electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: EasyPACK™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Supplier Device Package | AG-EASY1B-2 |
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