DF23MR12W1M1B11BOMA1
SIC 2N-CH 1200V AG-EASY1BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies DF23MR12W1M1B11BOMA1 is a Silicon Carbide (SiC) MOSFET array featuring two N-channel devices. This module offers a Vdss of 1200V (1.2kV) and a continuous drain current capability of 25A at 25°C. The device exhibits a low Rds On of 45mOhm at 25A and 15V. Key parameters include a gate charge (Qg) of 620nC at 15V and an input capacitance (Ciss) of 2000pF at 800V. The threshold voltage (Vgs(th)) is a maximum of 5.5V at 10mA. This chassis mount module, supplied in the AG-EASY1BM-2 package, is suitable for applications requiring high voltage and efficient switching, commonly found in industrial power supplies and electric vehicle charging infrastructure. Operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 25A |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 800V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 620nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | AG-EASY1BM-2 |
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