DF11MR12W1M1B11BPSA1
SIC 2N-CH 1200V AG-EASY1BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies CoolSiC™+ MOSFET array, part number DF11MR12W1M1B11BPSA1, is a dual N-channel device featuring a Drain-to-Source Voltage (Vdss) of 1200V. This chassis mount module offers a continuous drain current (Id) of 50A (Tj) with a low on-resistance (Rds On) of 22.5mOhm at 50A, 15V. The device utilizes Silicon Carbide (SiC) technology, providing enhanced performance for high-voltage applications. Key parameters include a Gate Charge (Qg) of 124nC at 15V and an Input Capacitance (Ciss) of 3680pF at 800V. The MOSFET array operates within a temperature range of -40°C to 150°C (TJ). This component is suitable for use in power conversion systems, electric vehicle powertrains, and industrial motor drives. The supplier device package is AG-EASY1BM-2.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 3680pF @ 800V |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 50A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Supplier Device Package | AG-EASY1BM-2 |
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