DF11MR12W1M1B11BOMA1
SIC 2N-CH 1200V AG-EASY1BM-2Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies DF11MR12W1M1B11BOMA1 is a Silicon Carbide (SiC) dual N-channel MOSFET array. This module features a Drain-Source voltage (Vdss) of 1200V (1.2kV) and a continuous drain current (Id) of 50A at 25°C. The on-resistance (Rds On) is a maximum of 23mOhm at 50A and 15V. Key parameters include a gate charge (Qg) of 125nC at 5V and input capacitance (Ciss) of 3950pF at 800V. The threshold voltage (Vgs(th)) is a maximum of 5.5V at 20mA. This component is designed for chassis mounting and operates across a temperature range of -40°C to 150°C (TJ). It is supplied in the AG-EASY1BM-2 module package and is available in tray packaging. This device is suitable for applications in high-voltage power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5.5V @ 20mA |
| Supplier Device Package | AG-EASY1BM-2 |
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