BTS7904SAKSA1
MOSFET N/P-CH 55V/30V 40A TO220Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BTS7904SAKSA1 is a high-side N-channel and P-channel MOSFET array from the OptiMOS™ series. This component features a continuous drain current (Id) of 40A per channel and drain-to-source voltages of 55V for the N-channel and 30V for the P-channel. The device offers a low on-resistance (Rds On) of 12mOhm at 20A, 10V, and a gate charge (Qg) of 123nC at 10V. With a maximum junction temperature of 150°C and a power dissipation of 69W (N-channel) and 96W (P-channel), it is suitable for demanding applications. The BTS7904SAKSA1 utilizes a through-hole mounting type within a PG-TO220-5-13 package, making it ideal for power management and motor control systems in automotive and industrial automation sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 69W, 96W |
| Drain to Source Voltage (Vdss) | 55V, 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 123nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 40µA |
| Supplier Device Package | PG-TO220-5-13 |
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