BTS7904BATMA1
MOSFET N/P-CH 55V/30V 40A TO263Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BTS7904BATMA1 is a high-performance MOSFET array designed for demanding applications. This device features N-channel and P-channel MOSFETs with drain-source voltages of 55V and 30V respectively. It offers a continuous drain current of 40A and maximum power dissipation of 69W (N-channel) and 96W (P-channel) at 25°C. The BTS7904BATMA1 boasts a low on-resistance of 11.7mOhm at 20A and 10V, and a logic-level gate for efficient drive. Key parameters include a gate charge of 121nC and input capacitance of 6100pF. Packaged in a PG-TO263-5-1 (TO-263BA) surface-mount package, this component is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-6, D2PAK (5 Leads + Tab), TO-263BA |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 69W, 96W |
| Drain to Source Voltage (Vdss) | 55V, 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 121nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 40µA |
| Supplier Device Package | PG-TO263-5-1 |