BSZ0910NDXTMA1
MOSFET 2N-CH 30V 9.5A WISON-8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSZ0910NDXTMA1 is a 2 N-channel MOSFET array featuring a 30V drain-source voltage and a continuous drain current of 9.5A at 25°C ambient, or 25A at 25°C case temperature. This device offers a low on-resistance of 9.5mOhm at 9A and 10V Vgs, with a logic level gate requiring only 4.5V for drive. Key parameters include a gate charge of 5.6nC (max) at 4.5V and an input capacitance of 800pF (max) at 15V. The BSZ0910NDXTMA1 is housed in a PG-WISON-8 package, specifically an 8-PowerVDFN, suitable for surface mounting. Its power dissipation is rated at 1.9W (Ta) and 31W (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET array finds application in automotive and industrial power management systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.9W (Ta), 31W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 25A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 15V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-WISON-8 |
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