BSZ0909NDXTMA1
MOSFET 2N-CH 30V 20A WISON-8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSZ0909NDXTMA1 is a 2 N-channel MOSFET array featuring a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A (Tc) at 25°C. This device utilizes MOSFET technology and offers a low on-resistance (Rds On) of 18mOhm at 9A and 10V. Optimized for 4.5V gate drive, it includes a logic level gate feature. The BSZ0909NDXTMA1 has a maximum power dissipation of 17W and a gate charge (Qg) of 2.6nC at 4.5V. Its input capacitance (Ciss) is a maximum of 360pF at 15V, with a threshold voltage (Vgs(th)) of 2V at 250µA. Packaged in a PG-WISON-8 (8-PowerVDFN) for surface mounting, this component is suitable for applications in automotive and industrial power management. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 17W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-WISON-8 |
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