BSZ0908NDXTMA2
MOSFET 2N-CH 30V 4.8A WISON-8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSZ0908NDXTMA2 is a dual N-channel MOSFET array designed for high-density power management applications. This component features a 30V drain-source voltage capability and supports continuous drain currents of 4.8A and 7.6A at 25°C ambient temperature. Optimized for logic-level gate drive, it operates efficiently with a 4.5V Vgs. The BSZ0908NDXTMA2 exhibits low on-resistance, with typical values of 18mO and 9mO at specified drain currents and gate voltages. Its low input capacitance (Ciss) of 340pF and 730pF, along with a gate charge (Qg) of 3nC and 6.4nC, facilitates fast switching performance. Packaged in a thermally enhanced PG-WISON-8 (8-PowerVDFN) surface-mount package, it is supplied on tape and reel for automated assembly. This MOSFET array is suitable for use in automotive and industrial power supply designs.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW (Ta), 860mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta), 7.6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 15V, 730pF @ 15V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V, 6.4nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-WISON-8 |
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