BSZ0907NDXTMA2
MOSFET 2N-CH 30V 6.7A WISON-8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies BSZ0907NDXTMA2 is a 30V, 2 N-Channel OptiMOS™ MOSFET array in a PG-WISON-8 package. This device features a low Rds(on) of 9.5mOhm at 9A, 10V and 7.2mOhm at 9A, 10V, with a Logic Level Gate requiring only 4.5V for drive. Continuous drain current is rated at 6.7A (Ta) and 8.5A (Ta), with power dissipation of 700mW (Ta) and 860mW (Ta). Input capacitance (Ciss) is a maximum of 730pF at 15V, and gate charge (Qg) is 6.4nC at 4.5V. This MOSFET array is suitable for applications in automotive and industrial sectors requiring efficient power switching. The component is supplied in Tape & Reel (TR) packaging. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW (Ta), 860mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta), 8.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 15V, 900pF @ 15V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 4.5V, 7.9nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-WISON-8 |
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