BSO615NGXUMA1
MOSFET 2N-CH 60V 2.6A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies SIPMOS® BSO615NGXUMA1 is a 2 N-Channel MOSFET array in a PG-DSO-8 package, designed for automotive applications and qualified to AEC-Q101. This dual MOSFET configuration offers a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of up to 2.6A per channel at 25°C. The device features a logic-level gate for enhanced driving flexibility and exhibits a maximum On-Resistance (Rds On) of 150mOhm at 2.6A and 4.5V. With a maximum power dissipation of 2W (Ta) and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for demanding automotive power management and switching applications. Input capacitance (Ciss) is a maximum of 380pF at 25V, and gate charge (Qg) is a maximum of 20nC at 10V. This component is supplied on tape and reel.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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