BSO615NGHUMA1
MOSFET 2N-CH 60V 2.6A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSO615NGHUMA1, a SIPMOS® series MOSFET array, features two N-channel enhancement mode transistors in a PG-DSO-8 package. This device offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 2.6A at 25°C. With a low Rds(On) of 150mOhm maximum at 2.6A and 4.5V Vgs, and a logic level gate, it is suitable for efficient switching applications. The device is rated for 2W power dissipation and operates across a temperature range of -55°C to 150°C. Key parameters include a maximum gate charge (Qg) of 20nC at 10V and input capacitance (Ciss) of 380pF at 25V. This component finds application in automotive and industrial power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
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